Resistive Switching in Strontium Iridates
by Víctor Fuentes López-Doriga, Advanced Characterization and Nanostructured Materials (ACNM) group, ICMAB, CSIC
Abstract: Resistive switching describes a wide variety of phenomena where a material can switch between two (or more) resistance states by the application of an external voltage. RAM memory devices based on this effect have been spotted as an appealing solution for the problems of miniaturization and energy consumption that other technologies are experimenting. In this context, materials possessing Metal-Insulator Transitions are considered excellent candidates for this type of applications.
In this work novel Resistive Switching properties of Strontium Iridates Ruddlesden-Popper phases (Srn+1IrnO3n+1), a family of materials near diverse Metal-Insulator Transitions, are studied. Moreover, the influence of these Transitions in the switching characteristics are analyzed and explained considering the changes in the band structure of the films.
Alberto Pomar, ACNM group, ICMAB
Lluís Balcells, ACNM group, ICMAB
President: Agustina Asenjo Barahona, ICMM, CSIC, Spain
Secretary: José Santiso López, ICN2, Spain
Vocal: Mónica Burriel López, Laboratoire des Matériaux et du Génie Physique (LMGP) · CNRS – Grenoble INP, Spain
University: Universitat Autònoma de Barcelona (UAB)
PhD Programme: Materials Science